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Product Details:
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| Product Name: | A Face Free-standing GaN Substrates | Dimensions: | 5 X 10mm² |
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| Thickness: | 350 ±25µm | TTV: | ≤ 10µm |
| BoW: | - 10µm ≤ BOW ≤ 10µm | Macro Defect Density: | 0cm⁻² |
| Highlight: | A Face GaN Epitaxial Wafer,GaN Substrate ISO,GaN Epitaxial Wafer Free Standing |
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm
5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer
Overview
Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality.
Power density is greatly improved in gallium nitride devices compared to silicon ones because GaN has the capacity to sustain much higher switching frequencies. It also has an increased ability to sustain elevated temperatures.
| A face Free-standing GaN Substrates | ||||
| Item | GaN-FS-A-U-S |
GaN-FS-A-N-S |
GaN-FS-A-SI-S |
Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 | |||
| Thickness | 350 ±25 µm | |||
| Orientation |
A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2° |
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| Conduction Type | N-type |
N-type |
Semi-Insulating | |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm | |
| TTV | ≤ 10 µm | |||
| BOW | - 10 µm ≤ BOW ≤ 10 µm | |||
| Front Surface Roughness |
< 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy) |
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| Back Surface Roughness |
0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) |
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| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 | |||
| Macro Defect Density | 0 cm-2 | |||
| Useable Area | > 90% (edge exclusion) | |||
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere | |||
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5°, then A plane (11-20) off angle toward M-Axis is 0 ±0.5°.
If δ2= - 1 ±0.2°, then A plane (11-20) off angle toward C-Axis is - 1 ±0.2°.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
