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Product Details:
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| Type:: | Flat Sapphire | Polish: | Single Side Polished (SSP) / Double Side Polished (DSP) |
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| Dimension: | 50.8±0.2 Mm (2in)/100±0.2 Mm(4in)/150 +0.2 Mm (6in) | Orientation: | C Plane (0001)off Angle Toward M-axis 0.2 + 0.1° |
| Thickness: | 430+25 Um (2in)/660+25 Um(4in)/1300 +25 Um (6in) | Type: | GaN On Sapphire Epitaxial Wafer |
| Highlight: | Chip Production gan epi wafer,Chip Production GaN Epitaxial Wafers,Chip Production GaN epi-wafers |
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Description:
Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to grow crystals and produce epitaxial wafers on substrate materials. Epitaxial wafers are then manufactured into wafers through processes such as photolithography, thin film deposition, and etching. The wafer is further cut into bare chips, which go through packaging processes such as substrate fixation, installation of protective shells, wire connection between chip circuit pins and external substrates, as well as circuit testing, performance testing, and other testing steps to ultimately produce the chip. The above chip production process needs to maintain interaction with the chip design process to ensure that the final chip meets the chip design requirements.
Based on the performance of gallium nitride, gallium nitride epitaxial wafers are mainly suitable for applications at high power, high frequency, medium and low voltage, specifically reflected in: 1) High bandgap width: The high bandgap width improves the voltage resistance level of gallium nitride devices, which can output higher power than gallium arsenide devices, especially suitable for 5G communication base stations, military radar and other fields; 2) High conversion efficiency: The conduction resistance of gallium nitride switch power electronic devices is three orders of magnitude lower than that of silicon devices, which can significantly reduce switch conduction losses; 3) High thermal conductivity: The high thermal conductivity of gallium nitride endows it with excellent heat dissipation performance, making it suitable for the production of devices in high-power, high temperature and other fields; 4) Breakdown electric field strength: Although the breakdown electric field strength of gallium nitride is similar to that of silicon nitride, the voltage tolerance of gallium nitride devices is usually around 1000V due to factors such as semiconductor technology and material lattice mismatch, and the safe operating voltage is usually below 650V
specifications:
| 2 - 6 inch Undoped GaN/Sapphire Wafer | |||
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Substrate |
Type | Flat Sapphire |
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| Polish | Single side polished (SSP) / Double side polished (DSP) | ||
| Dimension | 50.8 ±0.2 mm (2in) /100 ±0.2 mm (4in) /150 ±0.2 mm (6in) | ||
| Orientation | C plane (0001) off angle toward M-axis 0.2 ±0.1° | ||
| Thickness | 430 ±25 μm (2in) /660 ±25 μm (4in) /1300 ±25 μm (6in) | ||
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Epilayer |
Structure | 4.5 μm uGaN/~ 25 nm uGaN buffer/ Sapphire | |
| Conduction Type | N-type | ||
| Thickness/std | 4.5 ±0.5μm/ <3% | ||
| Roughness (Ra) | < 0.5 nm | ||
| XRD FWHMs | (0002) < 300 arcsec ,(10-12) < 400 arcsec | ||
| Resistivity (300K) | < 0.5 Ω·cm | ||
| Mobility | > 300 cm2/V·s | ||
| Carrier Concentration | ≤ 1×1017 cm-3 | ||
| Useable Area | > 90% (edge and macro defects exclusion) | ||
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Package |
Packaged in a cleanroom in a single wafer container |
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Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
