GaN 2 Inch Gallium Nitride Single Crystal Substrate

Un-Doped Freestanding GaN Substrate

1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate)

Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium nitride (GaN)crystals have a wide range of application scenarios, including LEDs, high-speed electronic devices, and power electronic devices. The quality of gallium nitride single crystal substrate(GaN substrate) has a crucial impact on the performance and yield of the crystal.

2,Product specifications

2-inch Free-standing U-GaN/SI-GaN Substrates
	Excellent level (S)		Production level(A)		Research level (B)	Dummy level (C)	Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o
	S-1	S-2	A-1	A-2
Dimensions	50.8 ± 1 mm
Thickness	350 ± 25 μm
Orientation flat	(1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat	(11-20) ± 3o, 8 ± 1 mm
Resistivity (300K)	< 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50) or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50)
TTV	≤ 15 μm
BOW	≤ 20 μm ≤ 40 μm
Ga face surface roughness	< 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness	0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished)
Package	Packaged in a cleanroom in single wafer container
Useable area	> 90%				>80%	>70%
Dislocation density	<9.9x105 cm-2	<3x106 cm-2	<9.9x105 cm-2	<3x106 cm-2	<3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis	0.35 ± 0.15o (3 points)		0.35 ± 0.15o (3 points)		0.35 ± 0.15o (3 points)
Macro defect density (hole)	0 cm-2		< 0.3 cm-2		< 1 cm-2
Max size of macro defects			< 700 μm		< 2000 μm	< 4000 μm