Single Crystal Gan Epi Wafer Gallium Nitride Substrate 4 Inch

Introduction to 4-inch iron doped gallium nitride single crystal  GaN substrate
4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) is a wide bandgap semiconductor material with a direct bandgap of 3.4 eV, which makes it widely used in optoelectronic and power electronic devices.

Preparation process
The process for preparing a 4-inch iron doped gallium nitride single crystal substrate includes:
MOCVD technology: used for growing high-quality gallium nitride single crystal layer 4.
Laser exfoliation technology: used to remove defects in single crystal layers and improve substrate performance.
HVPE technology: used for large-scale production of gallium nitride substrates to improve production efficiency.
In summary, 4-inch iron doped gallium nitride single crystal substrate is a high-performance semiconductor material with broad application prospects, especially in the fields of optoelectronics and power electronics.

2-inch Free-standing N-GaN Substrates
	Production level(P)			Research(R)	Dummy(D)	Note: (1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15o (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15o (3) Useable area: exclusion of periphery and macro defects (holes)
	P+	P	P-
Item	GaN-FS-C-N-C50-SSP
Dimensions	50.0 ±0.3 mm
Thickness	400 ± 30 μm
Orientation flat	(1- 100) ±0.1o, 12.5 ± 1 mm
TTV	≤ 15 μm
BOW	≤ 20 μm
Resistivity (300K)	≤ 0.02 Ω·cm for N-type (Si-doped)
Ga face surface roughness	≤ 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness	0.5 ~1.5 μm (single side polished)
C plane (0001) off angle toward M-axis(miscut angles)	0.55 ± 0.1o (5 points)	0.55± 0.15o (5 points)		0.55 ± 0.15o (3 points)
Threading dislocation density	≤ 7.5 x 105 cm-2	≤ 3 x 106 cm-2
Number and max size of holes in Ф47 mm in the center	0		≤ 3@1000 μm	≤ 12@1500 μm	≤ 20@3000 μm
Useable area	> 90%			>80%	>70%
Package	Packaged in a cleanroom in single wafer container