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China Shanghai GaNova Electronic Information Co., Ltd. sitemap

All Products

GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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GaN Epitaxial Wafer

5*10mm2 M-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm Power Device/Laser
5*10mm2 SP-Face (10-11) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Device
5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser
5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device

SiC Epitaxial Wafer

4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
4inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power And Microwave

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Contact Details

Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

China Shanghai GaNova Electronic Information Co., Ltd. sitemap

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP