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GaN Epitaxial Wafer
(65)

SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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GaN Epitaxial Wafer

A Face GaN Epitaxial Wafer Free Standing GaN Substrates
Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
4inch GaN On Sapphire Wafer Blue Green LED Wafer Flat Sapphire 100 mm

SiC Epitaxial Wafer

4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm
2 Inch Semiconductor Wafer P Level 260μm For Power Devices Microwave Devices
4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001
6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat

Aluminum Nitride Wafer

JDWY01-001-002 2 Inch Thick Film (1,2)Um AIN On Sapphire Wafer,DSP,XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec

Silicon Wafer

JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing
JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing
JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices
JDCD06-001-006 8-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

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Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

China Shanghai GaNova Electronic Information Co., Ltd. sitemap

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

GaN Epitaxial Wafer

SiC Epitaxial Wafer

Aluminum Nitride Wafer

Silicon Wafer

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP