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GaN Epitaxial Wafer
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SiC Epitaxial Wafer
(39)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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side polished ga2o3 wafer online manufacture

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JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.5nm Resistance 1.53E+18/cm-3 Optoelectronic devices, insulating layers of ... Read More

2024-10-29 11:49:58

Semiconductor Single Crystal Gallium Oxide Substrate UID Doping
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Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM Read More

2022-10-09 10:30:43

JDCD04-001-003 10x10mm2 100(Off 6°) Fe-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2 100(off 6) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra5nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2022-10-09 10:29:17

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

side polished ga2o3 wafer online manufacture

JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
Contact Now

Semiconductor Single Crystal Gallium Oxide Substrate UID Doping
Contact Now

JDCD04-001-003 10x10mm2 100(Off 6°) Fe-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
Contact Now

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP