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Single Side Polished Ga2O3 Wafer Single Crystal Substrate
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2024-10-29 11:49:58

Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
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Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0... Read More

2023-02-17 14:30:35

FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm
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2023-02-17 14:17:37

Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2024-10-29 11:49:58

10x15mm2 UID Doped Free Standing Ga2O3 Wafer Single Polishing
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JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single ... Read More

2022-09-27 16:57:32

10x10mm Ga2O3 Wafer 10x15mm Single Crystal Substrate
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10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.5nm Resistance 4.13E+17/cm-3 Optoelectronic devices, insulating layers ... Read More

2022-09-27 16:57:06

Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2022-10-09 10:34:19

Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch
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Ra0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0... Read More

2023-02-17 14:34:04

0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2024-10-29 11:49:58

JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Resistance Read More

2022-10-09 10:30:00

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

side polished ga2o3 wafer online manufacture

Single Side Polished Ga2O3 Wafer Single Crystal Substrate
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Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
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FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm
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Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2
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10x15mm2 UID Doped Free Standing Ga2O3 Wafer Single Polishing
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10x10mm Ga2O3 Wafer 10x15mm Single Crystal Substrate
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Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing
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Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch
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0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
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JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP