Send Message
Home ProductsGa2O3 Wafer

0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing

Certification
China Shanghai GaNova Electronic Information Co., Ltd. certification
I'm Online Chat Now

0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing

0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing 0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing

Large Image :  0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD04-001-001&002
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days

0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing

Description
Product Name: Single Crystal Substrate Orientation: (201)
Polished Surface: Single Side Polished FWHM: <350arcsec
Ra: ≤0.3nm Thickness: 0.6~0.8mm
Highlight:

Ga2O3 Single Crystal Substrate

,

Gallium Oxide wafer 0.6mm

,

0.8mm Single Crystal Substrate

10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters

 

Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality.

 

The purpose of this review is to summarize recent advances in the growth, processing and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial and nanostructures material, the difficulty in p-type doping and the development of processing techniques like etching, contact formation, dielectrics for gate formation and passivation are discussed.

 

Gallium nitride substrate--Product level
Dimensions 10*15mm 10*10mm
Thickness 0.6~0.8mm
Orientation (201)
Doping Fe Sn
Polished surface Single side polished
Resistivity/Nd-Na / <9E18
FWHM <350arcsec
Ra ≤0.3nm
Package Packaged in a class 100 clean room environment, under a nitrogen atmosphere

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

Send your inquiry directly to us (0 / 3000)