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JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

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JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices
JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Large Image :  JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD06-001-006
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 50000pcs/month

JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Description
Diameter: 12" Grade: Prime
Growth Method: CZ Orientation: <1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant: P Type/Boron,N Type/Phos,N Type/As, N Type/Sb Thickness(μm): 775
Thickness Tolerance: Standard ± 25μm,Maximum Capabilities ± 5μm Resistivity: 0.001-100 Ohm-cm
Surface Finished: P/E,P/P,E/E,G/G TTV(μm): Standard <10 Um,Maximum Capabilities<5 Um
Bow/Warp: Standard <40 Um,Maximum Capabilities<20 Um Particle: <10@0.5um; <10@0.3um; <10@0.2um;

12-inch silicon wafer MEMS devices, integrated circuits,dedicated substrates for discrete devices

 


Overview
A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices that enrich our lives. Few of us have a chance to encounter an actual silicon wafer in daily life.


Usually this printing process involves many steps in which different layers are stacked up on the silicon wafer surface, each layer with a different pattern, so the final result can be a complex design of electronic components and interconnecting wires. This printing process is usually called "microlithography."

 

 

 

 

Specification

 

silicon wafer

Diameter

 

2"/3"/4"/5"/6"/8"/12"
Grade Prime
Growth Method CZ
Orientation <1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
Thickness(μm) 279/380/525/625/675/725/775
Thickness Tolerance Standard ± 25μm,Maximum Capabilit/ies ± 5μm
Resistivity 0.001-100 ohm-cm
Surface Finished P/E,P/P,E/E,G/G
TTV(μm) Standard <10 um,Maximum Capabilities<5 um
Bow/Warp Standard <40 um,Maximum Capabilities<20 um
Particle <10@0.5um; <10@0.3um; <10@0.2um;

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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