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JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing

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JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing

JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing
JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing
JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing

Large Image :  JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD07-001-001
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 50000pcs/month

JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing

Description
Diameter: 4" Orientation: <100>,<111>
Type/Dopant: P Type/Boron , N Type/Phos, N Type/As, N Type/Sb Thickness(μm): 300-725
Resistivity: 0.001-20000 Ohm-cm Surface Finished: P/P, P/E
Particle: <10@.0.3um

4-Inch SOI Epitaxial Wafer For MEMS Processing

 


Overview

Although silicon crystals may look metallic, they are not entirely metals. Due to the "free electrons" that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure silicon crystal, on the other hand, is nearly an insulator; allowing very little electricity to pass through it. However, this can be changed through a process called doping.

 

 

Specification

 

SOI
Diameter 4’’ 5’’ 6’’ 7’’

 

 

Device Layer

Dopant Boron,Phos,Arsenic,Antimony,Undoped
Orientation <100>,<111>
Type SIMOX, BESOI, Simbond, Smart-cut
Resistivity 0.001-20000 Ohm-cm
Thickness(um) 0.2-150
The Uniformity <5%
BOX Layer Thickness(um) 0.4-3
Uniformity <2.5%

 

 

Substrate

Orientation <100>, <111>
Type/Dopant P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
Thickness(um) 300-725
Resistivity 0.001-20000 Ohm-cm
Surface Finished P/P, P/E
Particle <10@.0.3um

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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