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JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

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JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

JDCD07-001-002  5-Inch SOI Epitaxial Wafer For MEMS Processing
JDCD07-001-002  5-Inch SOI Epitaxial Wafer For MEMS Processing
JDCD07-001-002  5-Inch SOI Epitaxial Wafer For MEMS Processing JDCD07-001-002  5-Inch SOI Epitaxial Wafer For MEMS Processing

Large Image :  JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD07-001-002
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 50000pcs/month

JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

Description
Orientation: <100>,<111> Type/Dopant: P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
The Uniformity: <5% Resistivity: 0.001-20000 Ohm-cm
Surface Finished: P/E,P/P Uniformity: <2.5%
Particle: <10@.0.3um

5-inch SOI epitaxial wafer for MEMS processing

 


Overview

Silicon Wafers (Si Wafer) are thin slices of highly pure crystallized Silicon. Silicon wafers act as a substrate for microelectronic devices and are especially useful in building electronic circuits because of their conductivity and affordability. Silicon comes seventh as the most common element in the entire universe and the second most common element on earth. Some common materials that contain silicon are beach sand, quartz, flint, agate, among others. Silicon is the major component in construction materials like brick, cement, and glass. It also tops the chart as the most common semiconductor which has made it to be the most widely used in the electronic and technology sector

 

 

Specification

 

SOI
Diameter 4’’ 5’’ 6’’ 7’’

 

 

Device Layer

Dopant Boron,Phos,Arsenic,Antimony,Undoped
Orientation <100>,<111>
Type SIMOX, BESOI, Simbond, Smart-cut
Resistivity 0.001-20000 Ohm-cm
Thickness(um) 0.2-150
The Uniformity <5%
BOX Layer Thickness(um) 0.4-3
Uniformity <2.5%

 

 

Substrate

Orientation <100>, <111>
Type/Dopant P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
Thickness(um) 300-725
Resistivity 0.001-20000 Ohm-cm
Surface Finished P/P, P/E
Particle <10@.0.3um

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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