n type sic crystal online manufacture

100.0mm0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic ... Read More

Primary Flat Lengh 32.5mm2.0mm SiC Seed Crystal 4" P Grade 100.0mm0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than ... Read More

100.0mm0.5mm SiC Seed Crystal 4" P Grade 4.00.2 Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing ... Read More

4inch 4H-SiC substrate D-level N-Type 350.025.0m MPD5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates ... Read More

47.5 mm 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to1 JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon ... Read More

P-Level 2-Inch SiC Substrate 4H-N/SI260m25m For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview High crystal quality for ... Read More

4H SiC Epitaxial Wafer 0.015cm0.025cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha ... Read More

6inch 4H-SiC substrate D-level SI-Type 350.025.0m MPD5/cm2 Resistivity1E5cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, we offer manufacturers the ability ... Read More

0.015cm0.025cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were ... Read More