n type sic epitaxial wafer online manufacture

6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were ... Read More

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015Cm0.025Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic engineering ... Read More

4inch 4H-SiC substrate D-level N-Type 350.025.0m MPD5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates ... Read More

6inch 4H-SiC substrate D-level SI-Type 350.025.0m MPD5/cm2 Resistivity1E5cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, we offer manufacturers the ability ... Read More

M Face Free-Standing GaN Substrates Front Surface Roughness < 0.2 Nm (Polished) Or < 0.3 nm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser ... Read More

P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.025.0m MPD0.5/cm2 Resistivity1E9cm 6inch 4H-SiC substrate P-level SI-Type 350.025.0m MPD0.5/cm2 Resistivity1E9cm for power and microwave devices ... Read More