semiconductor gallium arsenide wafer online manufacture

GaAs-Si Wafer 2inch GaAs (100) Undoped Substrates (100)150.5 Off TowardA Overview Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some diode s, field-effect transistor s (FETs), and ... Read More

2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and ... Read More

Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw ... Read More

Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw ... Read More

JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for ... Read More

150.0 mm +0mm/-0.2mm Sic Epitaxial Wafer Off-Axis:4Toward 0.5 JDCD03-001-004 Overview A SiC wafer is a semiconductor made of silicon. Its flatness, thermal conductivity, and electrical conductivity make it an ... Read More

150.0mm +0mm/-0.2mm JDCD03-001-004 SiC Epitaxial Wafer 47.5 mm 1.5 mm Overview Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC ... Read More

6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

2inch GaAs (100) Si-doped substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and ... Read More

1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat ... Read More