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GaN Epitaxial Wafer

Best Products

GaN Single Crystal Substrate

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

C Face GaN Substrate

China GaN Epitaxial Wafer

5*10mm2 SP-Face (20-21)/(20-2-1) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.1 Ω·cm

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
5*10mm2 A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity <0.1 Ω·cm Power Device/Laser W

Dimensions:5 x 10mm²

Thickness:350 ±25 µm

Orientation:A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2°
10 X 10.5 mm2 Free-Standing GaN Substrates - 10 µm ≤ BOW ≤ 10 µm

Product Name:GaN Epitaxial Wafer

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm
10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm

TTV:≤ 10 µm
10 X 10.5 mm2 C-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate

Product Name:GaN Single Crystal Substrate

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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