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GaN Epitaxial Wafer

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GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

5*10mm2 M-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm Power Device/Laser

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
5*10mm2 SP-Face (10-11) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Device

Dimensions:5 x 10mm²

Thickness:350 ±25µm

Orientation:(10- 11) plane off angle toward A-axis 0 ±0.5° (10- 11) plane off angle toward C-axis - 1 ±0.2°
5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser

Dimensions:5 x 10mm²

Thickness:350 ±25µm

Orientation:A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis - 1 ±0.2°
5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device

Dimensions:5 x 10mm²

Thickness:350 ±25µm

Orientation:(11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2°
5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
10*10.5mm2 GaN Single Crystal Substrate C Plane (0001) Off Angle Toward M-Axis 0.35 ±0.15°

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm

Orientation:C plane (0001) off angle toward M-axis 0.35 ±0.15°
Thickness 350 ±25 µm 10 X 10.5 mm2 Free-Standing GaN Substrates

Product Name:Free-Standing GaN Substrates

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm
10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm

Product Name:GaN Epitaxial Wafer

Dimensions:10*10.5mm²

Thickness:350 ±25µm
4 Inch N-Type Si-Doped GaN On Sapphire Wafer SSP Resistivity＜0.05 Ω cm LED, Laser, PIN Epitaxial Wafer

Product Name:4-inch Si-doped GaN/Sapphire Substrates

Thickness/Thickness STD:4.5 ± 0.5μm /< 3%

Orientation:C plane (0001) off angle toward A-axis 0.2 ± 0.1 °
GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)

Product Name:GaN single crystal substrate

Dimensions:10 x 10.5mm²

Thickness:350 ±25µm
AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer

Dimensions:2 inch /4inch

AlGaN buffer Thickness:600nm

Longueur d’onde laser:455±10nm
2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device

Type::Flat Sapphire

Polish:Single side polished (SSP) / Double side polished (DSP)

Dimension:50.8±0.2 mm (2in)/100±0.2 mm(4in)/150 +0.2 mm (6in)

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GaN Epitaxial Wafer

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

5*10mm2 M-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm Power Device/Laser

5*10mm2 SP-Face (10-11) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Device

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser

5*10mm2 SP-Face (11-12) Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶Ω·Cm RF Device

5*10mm2 A-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

10*10.5mm2 GaN Single Crystal Substrate C Plane (0001) Off Angle Toward M-Axis 0.35 ±0.15°

Thickness 350 ±25 µm 10 X 10.5 mm2 Free-Standing GaN Substrates

10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm

4 Inch N-Type Si-Doped GaN On Sapphire Wafer SSP Resistivity＜0.05 Ω cm LED, Laser, PIN Epitaxial Wafer

GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)

AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer

2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP