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GaN Epitaxial Wafer

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GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

Type::Flat Sapphire

Polish:Single side polished (SSP) / Double side polished (DSP)

Dimension:50.8±0.2 mm (2in)/100±0.2 mm(4in)/150 +0.2 mm (6in)
625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

Product Name:4inch GaN-on-Sapphire Blue/Green LED Wafer

Type:Flat Sapphire

Thickness:650 ± 25μm
GaN 2 Inch Gallium Nitride Single Crystal Substrate

Minimum Order Quantity:1

Packaging Details:Inner packaging: wafer specific packaging box, outer packaging: cardboard box packaging, built-in shock-absorbing film

Payment Terms:T/T
Single Crystal Gan Epi Wafer Gallium Nitride Substrate 4 Inch

Minimum Order Quantity:1

Packaging Details:Inner packaging: wafer specific packaging box, outer packaging: cardboard box packaging, built-in shock-absorbing film

Payment Terms:T/T
4 Inch Fe Doped Freestanding GaN Substrate Gallium Nitride

Minimum Order Quantity:1

Packaging Details:Inner packaging: wafer specific packaging box, outer packaging: cardboard box packaging, built-in shock-absorbing film

Payment Terms:T/T
2inch Green-LED GaN On Silicon Wafer Dimension 520±10nm

Product Name:Green-LED GaN on silicon wafer

Size:2 inch 4 inch

Substrate Structure:20nmContact layer/145nmpGaN/35nmAlGaN/~10nmGaN-QB/~3Si(111)substrates
5*10mm2 SP-Face (20-21)/(20-2-1) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
5*10mm2 SP-Face (11-12) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.1 Ω·cm Power Device

Dimensions:5 x 10mm²

Orientation:(11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2°

TTV:≤ 10µm
5*10mm2 SP-Face (11-12) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity <0.05 Ω·cm

Dimensions:5 x 10mm²

Thickness:350 ±25µm

Orientation:(11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2°
5*10mm2 M-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

Dimensions:5 x 10mm²

Thickness:350 ±25µm

BoW:- 10µm ≤ BOW ≤ 10µm
5*10mm2 SP-Face (10-11) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm

Dimensions:5 x 10mm²

Thickness:350 ±25µm

TTV:≤ 10µm
5*10mm2 SP-Face (10-11) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity <0.1 Ω·cm Power Device

Dimensions:5 x 10mm²

Thickness:350 ±25µm

Orientation:(10- 11) plane off angle toward A-axis 0 ±0.5° (10- 11) plane off angle toward C-axis - 1 ±0.2°

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GaN Epitaxial Wafer

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

625um To 675um 4 Inch Blue LED Gallium Nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

GaN 2 Inch Gallium Nitride Single Crystal Substrate

Single Crystal Gan Epi Wafer Gallium Nitride Substrate 4 Inch

4 Inch Fe Doped Freestanding GaN Substrate Gallium Nitride

2inch Green-LED GaN On Silicon Wafer Dimension 520±10nm

5*10mm2 SP-Face (20-21)/(20-2-1) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm

5*10mm2 SP-Face (11-12) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.1 Ω·cm Power Device

5*10mm2 SP-Face (11-12) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity <0.05 Ω·cm

5*10mm2 M-Face Un-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer

5*10mm2 SP-Face (10-11) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity < 0.05 Ω·cm

5*10mm2 SP-Face (10-11) Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity <0.1 Ω·cm Power Device

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP