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GaN Epitaxial Wafer
(62)

SiC Epitaxial Wafer
(28)

GaAs Epi Wafer
(15)

CVD Diamond Substrates
(15)

Rapid Thermal Annealing System
(2)

Hall Effect Sensor Tester
(3)

Aluminum Nitride Wafer
(21)

Laser Diode Chip
(10)

Silicon Carbide Crystal
(12)

Ga2O3 Wafer
(13)

Silicon Wafer
(26)

Sapphire Wafer
(19)

Patterned Sapphire Substrates
(10)

Wafer Holder
(1)

Wafer Dicing Machine
(5)

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free standing gan substrates online manufacture

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GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)
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10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview We provide high-quality GaN substrates which are produced by originally designed HVPE ... Read More

2022-10-08 16:58:42

Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type
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2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview High-quality GaN free-standing substrates with low dislocation density suitable for ... Read More

2022-10-08 16:00:57

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped
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(1- 100) 0.1o, 12.5 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Growth of ... Read More

2023-02-17 17:50:47

GaN Single Crystal Substrate
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview One of the key methods used to fabricate these devices is a light n-type doping of ... Read More

2023-02-17 17:55:56

Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
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Thickness 400 30 m 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview ... Read More

2023-02-17 17:52:26

JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.5nm Resistance 1.53E+18/cm-3 Optoelectronic devices, insulating layers of ... Read More

2023-02-17 14:49:57

JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Resistance Read More

2022-10-09 10:30:00

JDCD04-001-003 10x10mm2 100(Off 6°) Fe-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2 100(off 6) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra5nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2022-10-09 10:29:17

0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2023-02-17 14:49:22

Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
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Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0... Read More

2023-02-17 14:30:35

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GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

free standing gan substrates online manufacture

GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)
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Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type
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12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped
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GaN Single Crystal Substrate
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Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
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JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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JDCD04-001-003 10x10mm2 100(Off 6°) Fe-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
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Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP