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Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch
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Ra0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0... Read More

2023-02-17 14:34:04

Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2022-10-09 10:34:19

0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0.3 nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2024-10-29 11:49:58

2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm
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2inch Blue-LED GaN on silicon wafer Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several characteristics that make it ... Read More

2023-02-17 11:40:11

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10 cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers ... Read More

2024-07-31 15:01:27

Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
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Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra0... Read More

2023-02-17 14:30:35

10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview We sell directly from the factory, and therefore can offer the best prices on the ... Read More

2022-10-25 15:05:44

2inch Green-LED GaN On Silicon Wafer Dimension 520±10nm
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2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs (Metal Oxide Semiconductor Field ... Read More

2023-02-17 11:21:32

Dimension 520±10nm 2inch Green-LED GaN On Silicon Wafer 20nmContact Layer
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2inch Green-LED GaN on silicon wafer Overview Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs (Metal Oxide Semiconductor Field ... Read More

2023-02-17 11:16:39

JDCD04-001-003 10x10mm2 100(Off 6°) Fe-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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10x10mm2 100(off 6) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM350arcsec,Ra5nm Optoelectronic devices, insulating layers of semiconductor ... Read More

2022-10-09 10:29:17

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

gallium nitride semiconductor wafer online manufacture

Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch
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Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing
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0.6mm 0.8mm Ga2O3 Single Crystal Substrate Single Polishing
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2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
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10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·Cm RF Devices Wafer
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2inch Green-LED GaN On Silicon Wafer Dimension 520±10nm
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Dimension 520±10nm 2inch Green-LED GaN On Silicon Wafer 20nmContact Layer
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JDCD04-001-003 10x10mm2 100(Off 6°) Fe-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP